Difference between revisions of "Laser cooling of trapped ions"

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imported>Ichuang
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rather, hundreds to thousands of individually controlled ion qubits,
 
rather, hundreds to thousands of individually controlled ion qubits,
 
in highly integrated trapped ion chips.
 
in highly integrated trapped ion chips.
 +
 
This chapter begins with a description of laser cooling in the trapped
 
This chapter begins with a description of laser cooling in the trapped
 
ion physical system.  We then describe how arbitrary motional states
 
ion physical system.  We then describe how arbitrary motional states
Line 24: Line 25:
 
describes quantum computation with trapped ions, and the fourth
 
describes quantum computation with trapped ions, and the fourth
 
section covers concepts in quantum simulation with ions.
 
section covers concepts in quantum simulation with ions.
 +
 
== Laser cooling of trapped ions ==
 
== Laser cooling of trapped ions ==
 +
 
A simple comparison of potential depths provides useful perspective
 
A simple comparison of potential depths provides useful perspective
 
for understanding the experimental convenience of trapped ions versus
 
for understanding the experimental convenience of trapped ions versus
Line 37: Line 40:
 
ion trap can be over <math>\sim 10^4</math> K.  This allows hot ions to be
 
ion trap can be over <math>\sim 10^4</math> K.  This allows hot ions to be
 
readily trapped, and subsequently laser cooled.
 
readily trapped, and subsequently laser cooled.
 +
 
A unique aspect of trapped ions, versus neutral atoms, is the
 
A unique aspect of trapped ions, versus neutral atoms, is the
 
importance of the role of the trapping potential in the laser cooling
 
importance of the role of the trapping potential in the laser cooling
Line 44: Line 48:
 
resolved sideband cooling} to be performed, through which ions can be
 
resolved sideband cooling} to be performed, through which ions can be
 
cooled to their motional ground states.
 
cooled to their motional ground states.
 +
 
=== Physical system ===
 
=== Physical system ===
 +
 
Two kinds of ion traps are widely used.  The Penning trap employs
 
Two kinds of ion traps are widely used.  The Penning trap employs
 
static magnetic and electric fields to confine ions.  The Paul trap
 
static magnetic and electric fields to confine ions.  The Paul trap
 
employs just oscillating electric fields, and is the configuration we
 
employs just oscillating electric fields, and is the configuration we
 
shall study here.
 
shall study here.
 +
 
Consider this electrode configuration:
 
Consider this electrode configuration:
 
::[[Image:Laser_cooling_of_trapped_ions-paul-trap.png|thumb|400px|none|]]
 
::[[Image:Laser_cooling_of_trapped_ions-paul-trap.png|thumb|400px|none|]]
\noindent
 
 
The inner surfaces are hyperboloids, the top and bottom electrodes are
 
The inner surfaces are hyperboloids, the top and bottom electrodes are
 
tied together, and the drive voltage oscillates sinusoidally at
 
tied together, and the drive voltage oscillates sinusoidally at
Line 83: Line 89:
 
ion system are thus described by an atom coupled to a simple harmonic
 
ion system are thus described by an atom coupled to a simple harmonic
 
oscillator.
 
oscillator.
 +
 
Typically, RF frequencies are <math>\Omega \sim 10</math> MHz or higher, and secular
 
Typically, RF frequencies are <math>\Omega \sim 10</math> MHz or higher, and secular
 
frequencies are <math>\nu \sim 1</math> MHz.  These may be compared with typical
 
frequencies are <math>\nu \sim 1</math> MHz.  These may be compared with typical
Line 97: Line 104:
 
phonon, where the phonon represents quantized vibrational modes of the
 
phonon, where the phonon represents quantized vibrational modes of the
 
trapped atom.
 
trapped atom.
 +
 
=== Hamiltonian: classical field + 2-level atom ===
 
=== Hamiltonian: classical field + 2-level atom ===
 +
 
Let us model the trapped ion system initially using a classical field,
 
Let us model the trapped ion system initially using a classical field,
 
and neglect spontaneous emission.  Let us also approximate the atom to
 
and neglect spontaneous emission.  Let us also approximate the atom to
Line 122: Line 131:
 
\,.
 
\,.
 
</math>
 
</math>
 +
 
==== The Lamb-Dicke parameter ====
 
==== The Lamb-Dicke parameter ====
 +
 
When the ions are well-confined, a natural small parameter arises, in
 
When the ions are well-confined, a natural small parameter arises, in
 
which this interaction can be expanded.  This parameter describes the
 
which this interaction can be expanded.  This parameter describes the
Line 137: Line 148:
 
Note that <math>\eta</math> can also be understood as being the ratio of the
 
Note that <math>\eta</math> can also be understood as being the ratio of the
 
recoil frequency to the vibrational frequency.
 
recoil frequency to the vibrational frequency.
 +
 
==== Expansion in the Lamb-Dicke parameter ====
 
==== Expansion in the Lamb-Dicke parameter ====
 +
 
Let us now expand <math>H_I</math> to leading order in <math>\eta</math>.  Recall that <math>S_x
 
Let us now expand <math>H_I</math> to leading order in <math>\eta</math>.  Recall that <math>S_x
 
= (S_+ + S_-)/2</math>, and let <math>\Omega = (d\times E)/2\hbar</math> be the Rabi
 
= (S_+ + S_-)/2</math>, and let <math>\Omega = (d\times E)/2\hbar</math> be the Rabi
Line 205: Line 218:
 
The first few energy levels are diagrammed here:
 
The first few energy levels are diagrammed here:
 
::[[Image:Laser_cooling_of_trapped_ions-ion-sho-levels.png|thumb|400px|none|]]
 
::[[Image:Laser_cooling_of_trapped_ions-ion-sho-levels.png|thumb|400px|none|]]
 +
 
=== Resolved sideband cooling ===
 
=== Resolved sideband cooling ===
 +
 
When the ion is hot, doppler shifts will dominate, and the sidebands
 
When the ion is hot, doppler shifts will dominate, and the sidebands
 
will be unresolvable.  However, for many ions, standard doppler
 
will be unresolvable.  However, for many ions, standard doppler
Line 212: Line 227:
 
method can be applied; this method is known as {\em resolved sideband
 
method can be applied; this method is known as {\em resolved sideband
 
cooling}.
 
cooling}.
 +
 
The basic idea of this method is analogous to optical pumping: the
 
The basic idea of this method is analogous to optical pumping: the
 
laser is detuned to cause transitions on the red sideband of the ion,
 
laser is detuned to cause transitions on the red sideband of the ion,
Line 217: Line 233:
 
laser cooling of neutral atoms, let us calculate the cooling limit of
 
laser cooling of neutral atoms, let us calculate the cooling limit of
 
such a procedure.
 
such a procedure.
 +
 
Let <math>|n{\rangle}</math> be an eigenstate of the harmonic motion of the ion, with
 
Let <math>|n{\rangle}</math> be an eigenstate of the harmonic motion of the ion, with
 
motional quantum number <math>n</math>, and recall that <math>a|n{\rangle}=\sqrt{n}|n-1{\rangle}</math>
 
motional quantum number <math>n</math>, and recall that <math>a|n{\rangle}=\sqrt{n}|n-1{\rangle}</math>
Line 235: Line 252:
 
response of the atom to a laser detuned by <math>\Delta =
 
response of the atom to a laser detuned by <math>\Delta =
 
\omega_L-\omega_0</math> from the atomic resonance.
 
\omega_L-\omega_0</math> from the atomic resonance.
 +
 
The incident laser light can connect three basic transitions: the
 
The incident laser light can connect three basic transitions: the
 
carrier, the blue sideband, and the red sideband.  How do those
 
carrier, the blue sideband, and the red sideband.  How do those
Line 259: Line 277:
 
average phonon number.  For the transitions
 
average phonon number.  For the transitions
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-transitions.png|thumb|400px|none|]]
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-transitions.png|thumb|400px|none|]]
\noindent
 
 
where <math>P_n</math> is the probability of being in the <math>n</math> phonon state, the
 
where <math>P_n</math> is the probability of being in the <math>n</math> phonon state, the
 
transition rate coefficients are
 
transition rate coefficients are
Line 304: Line 321:
 
sidebands are poorly resolved:
 
sidebands are poorly resolved:
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-weakc.png|thumb|400px|none|]]
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-weakc.png|thumb|400px|none|]]
\noindent
+
 
 
The optimum detuning is <math>\Delta = \omega_L-\omega_0 = -\Gamma/2</math>, and
 
The optimum detuning is <math>\Delta = \omega_L-\omega_0 = -\Gamma/2</math>, and
 
cooling corresponds to standard Doppler cooling of free particles,
 
cooling corresponds to standard Doppler cooling of free particles,
Line 322: Line 339:
 
individual sidebands are well resolved:
 
individual sidebands are well resolved:
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-strongc.png|thumb|400px|none|]]
 
::[[Image:Laser_cooling_of_trapped_ions-ion-cooling-strongc.png|thumb|400px|none|]]
\noindent
+
 
 
This is the case of resolved sideband cooling, as mentioned
 
This is the case of resolved sideband cooling, as mentioned
 
above.  For this case, the laser is detuned to <math>\omega_L =
 
above.  For this case, the laser is detuned to <math>\omega_L =

Revision as of 19:15, 23 February 2009

Ion traps and quantum information

Thus far, we have focused our attention on neutral atoms, and their interactions with the electromagnetic field. Charged atoms are an important physical system which are also important to study, for a variety of reasons. They can be confined in with much deeper potential wells, using electric fields, than is possible with light forces alone. Ions can also be readily trapped in small numbers, allowing single atoms or small, discrete numbers of atoms to be individually manipulated. This capability has made trapped ions an excellent physical system for creation of exotic quantum states, such as Schr\"odinger cat superpositions, and highly entangled multi-atom states. Trapped ions have also proven to be an excellent platform for implementation of many quantum information protocols, including teleportation, superdense coding, and quantum error correction; simple quantum algorithms such as the Deutsch-Jozsa and Grover quantum search algorithms have also been demonstrated. Efforts are underway in the community to realize trapped ion systems with not just handfuls, but rather, hundreds to thousands of individually controlled ion qubits, in highly integrated trapped ion chips.

This chapter begins with a description of laser cooling in the trapped ion physical system. We then describe how arbitrary motional states of ions can be engineered, in the second section. The third section describes quantum computation with trapped ions, and the fourth section covers concepts in quantum simulation with ions.

Laser cooling of trapped ions

A simple comparison of potential depths provides useful perspective for understanding the experimental convenience of trapped ions versus neutral atoms. Recall that the depth of a dipole force trap is ; for a Watt laser at m focused to a m waist used to trap atomic sodium, the trap depth is K; this is not much more than the Doppler cooling limit. A magneto-optical trap is much deeper; for typical laboratory magnetic field gradients, depths of K can be obtained. In contrast, a singly charged ion in an electric field of V/mm, which is easily obtained in the laboratory, the depth of an RF ion trap can be over K. This allows hot ions to be readily trapped, and subsequently laser cooled.

A unique aspect of trapped ions, versus neutral atoms, is the importance of the role of the trapping potential in the laser cooling process. As the motion of ions is reduced to the characteristic size of their confining potential, quantum aspects of their motion become accessible. This allows a form of laser cooling known as {\em resolved sideband cooling} to be performed, through which ions can be cooled to their motional ground states.

Physical system

Two kinds of ion traps are widely used. The Penning trap employs static magnetic and electric fields to confine ions. The Paul trap employs just oscillating electric fields, and is the configuration we shall study here.

Consider this electrode configuration:

Laser cooling of trapped ions-paul-trap.png

The inner surfaces are hyperboloids, the top and bottom electrodes are tied together, and the drive voltage oscillates sinusoidally at frequency , such that near the center of the electrodes, the potential is

For a singly charged ion of mass located in this trap, the solutions to the equations of motion balancing the force of the electric field against ion motion are

This is a Mathieu equation, where

and is a non-dimensional parameter. When , stable solutions exist. These solutions describe a fast oscillation known as micromotion, superposed on top of a slow harmonic motion with secular frequency

The amplitude of micromotion, in a well designed experiment, is very small, and thus can be neglected. The dominant physics of a trapped ion system are thus described by an atom coupled to a simple harmonic oscillator.

Typically, RF frequencies are MHz or higher, and secular frequencies are MHz. These may be compared with typical spontaneous emission rates of MHz, and the recoil energy from a single photon emission of

where is the frequency of the laser. The three systems involved in this scenario are thus the trapped ion, with its atomic levels, the harmonic oscillator, and incident electromagnetic radiation on the atom. That is, we have a system of atom + photon + phonon, where the phonon represents quantized vibrational modes of the trapped atom.

Hamiltonian: classical field + 2-level atom

Let us model the trapped ion system initially using a classical field, and neglect spontaneous emission. Let us also approximate the atom to be a two-level system. The Hamiltonian for such a system has the interaction

where we use to denote the spin of the atom, and assume the electric field is along the direction. is the position of the ion in the field; we quantize this degree of freedom by representing it as motion in a harmonic oscillator, letting

where is the characteristic length scale of the harmonic motion. The interaction Hamiltonian can thus be written as

The Lamb-Dicke parameter

When the ions are well-confined, a natural small parameter arises, in which this interaction can be expanded. This parameter describes the extent to which the ion is localized in the trap, relative to the incident light. We define this Lamb-Dicke parameter as

It is the ratio of the size of the ground state wavefunction of the motion in the harmonic oscillator, to the incident laser wavelength:

Laser cooling of trapped ions-lamb-dicke.png

\noindent Note that can also be understood as being the ratio of the recoil frequency to the vibrational frequency.

Expansion in the Lamb-Dicke parameter

Let us now expand to leading order in . Recall that , and let be the Rabi frequency. In terms of these,

The exponentials can be expanded to leading order in , resulting in terms of the form , such that

In the above expansion, it is assumed that the laser's frequency is close to that of the atomic transition, such that to good approximation, terms oscillating as can be dropped (the rotating wave approximation). The first term in this expression describes the carrier transition, in which the light changes the internal atomic state, and the second term describes sideband transitions, in which the light changes both the internal atomic state as well as its motional state. These transitions have a frequency spectrum which looks like:

Laser cooling of trapped ions-ion-sho-spectrum.png

Moving into the rotating frame defined by the atom's internal and motional states simplifies this Hamiltonian, providing a time-independent form. Let this frame be defined by the system Hamiltonian

such that in the rotating frame, operators are transformed according to

The interaction Hamiltonian in this frame is approximated by

The first few energy levels are diagrammed here:

Laser cooling of trapped ions-ion-sho-levels.png

Resolved sideband cooling

When the ion is hot, doppler shifts will dominate, and the sidebands will be unresolvable. However, for many ions, standard doppler cooling is sufficient to reach the point at which the motional sidebands become resolvable. In that regime, a different cooling method can be applied; this method is known as {\em resolved sideband cooling}.

The basic idea of this method is analogous to optical pumping: the laser is detuned to cause transitions on the red sideband of the ion, removing one quantum of motion for each photon absorbed. Just as for laser cooling of neutral atoms, let us calculate the cooling limit of such a procedure.

Let be an eigenstate of the harmonic motion of the ion, with motional quantum number , and recall that and . The transition amplitude between motional states and is given by this matrix element of the interaction Hamiltonian:

in the limit that is small, and we're interested only in terms which couple and . Let us define

as the lineshape function; it captures the frequency dependent response of the atom to a laser detuned by from the atomic resonance.

The incident laser light can connect three basic transitions: the carrier, the blue sideband, and the red sideband. How do those transitions contribute to changing the motional quantum number ? Excitations of the carrier transition couple (using ) to the state , with rate proportional to . The excited state can then decay to or , changing the motional quantum number; these transitions occur with rates proportional to and , respectively, where is a geometric factor describing the probability for spontaneous emission to change . For dipole emission into free space, . These transitions are diagrammed as follows:

Laser cooling of trapped ions-ion-cooling-carrier.png

On the blue and red sidebands, absorption happens at a rate proportional to and , while spontaneous emission happens at rate proportional to , all-together connecting with . These transitions are diagrammed as follows:

Laser cooling of trapped ions-ion-cooling-sidebands.png

To obtain the cooling limits of resolved sideband cooling, we need to write down the rate equations for these phonon-number changing carrier and sideband excitation processes, and solve for the steady state average phonon number. For the transitions

Laser cooling of trapped ions-ion-cooling-transitions.png

where is the probability of being in the phonon state, the transition rate coefficients are

The first term in the brackets comes from the sideband excitations, and the second from the carrier. The rate equations for the populations are thus

The average phonon number is

which evolves as

This differential equation has a solution in which decays exponentially as to an equilibrium average phonon number ,

The corresponding equilibrium temperature is given by

It is insightful to evaluate these expressions in two limits. When the ion is weakly confined, such that , then the sidebands are poorly resolved:

Laser cooling of trapped ions-ion-cooling-weakc.png

The optimum detuning is , and cooling corresponds to standard Doppler cooling of free particles, giving

with a final temperature of around

Including geometric factors reduces this slightly, by . The strong confinement limit is reached when , so that individual sidebands are well resolved:

Laser cooling of trapped ions-ion-cooling-strongc.png

This is the case of resolved sideband cooling, as mentioned above. For this case, the laser is detuned to , such that , and , such that the equilibrium average phonon number, given by

is approximately , which is much less than one. This corresponds to a temperature of

Essentially, the final temperature is set by zero-point motion of the ion in the harmonic trap.

References